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PULSED LASER DEPOSITION OF CRYSTALLINE SILICON CARBIDE FILMS

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bias temperature instability (BTI) in silicon carbide

A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically

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《Silicon Carbide: Volume 2: Power Devices and Sensors》

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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF

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2019328-A resource-utilization strategy of the waste PCBs was developed: preparation of high value-added silicon carbide (SiC) nanoparticles using t

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Thermoluminescence dosimetric properties of silicon carbide (

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Silicon Carbide (SiC) Diodes

A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to

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A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; forming a first graphene material on a

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Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon

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Provided are methods and apparatuses for densifying a silicon carbide film using remote plasma treatment. Operations of remote plasma deposition and remote

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Flexural Strength of Poly(lactic acid)/Silicon Carbide

Silicon carbide (SiC) nanoparticles were surface modified using a silane coupling agent, and their properties were characterized using Fourier

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