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Bulk, low impurity aluminum nitride:silicon carbide (AlN:SiC) alloy single crystals are grown by deposition of vapor species containing Al, Si, N and C

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Method of forming a silicon carbide pmos device Download PDF InfoPublication number EP2033212B1 EP2033212B1 EP07776308.4A EP07776308A EP2033212B1 EP

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A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A

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A silicon carbide device is fabricated by forming a plurality of a same type of silicon carbide devices on at least a portion of a silicon carbide

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The technology employs amorphous silicon carbide as the insulator and conductive silicon carbide at the recording sites, resulting in a seamless transition

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