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Gurov, Y. B.; Rozov, S. V.; Sandukovsky, V. G.; Yakushev, E. A.; Hrubcin, L.; Zat’ko, B., 2015: Characteristics of silicon carbide

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A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source

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Resistance of Silicon Carbide Schottky Diode Detectors in

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Alloy(8090) and Silicon Carbide (Sic) Metal Matrix Composite

Using Aluminium Alloy(8090) and Silicon Carbide (Sic) Metal Matrix Composite(LMM) framework has been proposed in this paper, and been applied to

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The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition

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